A Novel Scaling Theory for Fully Depleted, Multiple-Gate MOSFET, Including Effective Number of Gates (ENGs)

This brief presents a novel scaling theory for fully depleted, multiple-gate (MG) MOSFET. The scaling theory is derived from the equation for effective number of gates (ENGs), ENG_QG=ENG_DG,1+ENG_DG,2 where the MG device can be genuinely broken into two equivalent double-gate (DG) transistors working in parallel based on the perimeter-weighted-sum method. Numerical device simulation data for drain-induced-barrier-lowering were compared with the model to validate the formula. Using the scaling theory, the minimum effective channel length improvement factor of ρ_MG=1-(ENG_DG/ENG_MG)^1/2 shows an improvement of up to 30% in the minimum effective channel length for the MG MOSFET in comparison with DG MOSFET.