• DocumentCode
    3238819
  • Title

    RF and DC characterization of P-channel Al0.5Ga0.5 As/GaAs MODFETs with gate lengths as small as 0.25 μm

  • Author

    Park, H. ; Mandeville, P. ; Saito, R. ; Tasker, P.J. ; Schaff, W.J. ; Eastman, L.F.

  • Author_Institution
    Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
  • fYear
    1989
  • fDate
    7-9 Aug 1989
  • Firstpage
    101
  • Lastpage
    110
  • Abstract
    The authors have fabricated Al0.5Ga0.5As/GaAs MODFETs with gate length as small as 0.25 μm and characterized them at both DC and RF in an effort to realize high-speed complementary MODFET circuits. Good gate characteristics, high current-drive capability, and high transconductance have been demonstrated. A current-gain cutoff frequency as high as 10 GHz has been obtained, and an effective hole velocity of 1.7×106 cm/s has been estimated from RF data. The device performance shows the potential of the p-channel MODFETs in high-speed complementary heterostructure circuits
  • Keywords
    III-V semiconductors; aluminium compounds; carrier mobility; gallium arsenide; high electron mobility transistors; solid-state microwave devices; 0.25 micron; 10 GHz; Al0.5Ga0.5As-GaAs; DC characterization; RF characterization; current-drive capability; current-gain cutoff frequency; effective hole velocity; gate characteristics; gate lengths; high-speed complementary MODFET circuits; p-channel MODFETs; transconductance; Doping; Epitaxial layers; FETs; Gallium arsenide; Gold; HEMTs; MODFET circuits; Nanofabrication; Performance evaluation; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Speed Semiconductor Devices and Circuits, 1989. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
  • Conference_Location
    Ithaca, NY
  • Type

    conf

  • DOI
    10.1109/CORNEL.1989.79859
  • Filename
    79859
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3238819