Title :
RF and DC characterization of P-channel Al0.5Ga0.5 As/GaAs MODFETs with gate lengths as small as 0.25 μm
Author :
Park, H. ; Mandeville, P. ; Saito, R. ; Tasker, P.J. ; Schaff, W.J. ; Eastman, L.F.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
The authors have fabricated Al0.5Ga0.5As/GaAs MODFETs with gate length as small as 0.25 μm and characterized them at both DC and RF in an effort to realize high-speed complementary MODFET circuits. Good gate characteristics, high current-drive capability, and high transconductance have been demonstrated. A current-gain cutoff frequency as high as 10 GHz has been obtained, and an effective hole velocity of 1.7×106 cm/s has been estimated from RF data. The device performance shows the potential of the p-channel MODFETs in high-speed complementary heterostructure circuits
Keywords :
III-V semiconductors; aluminium compounds; carrier mobility; gallium arsenide; high electron mobility transistors; solid-state microwave devices; 0.25 micron; 10 GHz; Al0.5Ga0.5As-GaAs; DC characterization; RF characterization; current-drive capability; current-gain cutoff frequency; effective hole velocity; gate characteristics; gate lengths; high-speed complementary MODFET circuits; p-channel MODFETs; transconductance; Doping; Epitaxial layers; FETs; Gallium arsenide; Gold; HEMTs; MODFET circuits; Nanofabrication; Performance evaluation; Radio frequency;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1989. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
DOI :
10.1109/CORNEL.1989.79859
