Title :
1200 V 20 A integrated light triggered and quenched static induction thyristor (LTQ SI thyristor)
Author :
Saito, M. ; Hasegawa, Y. ; Katsumata, M. ; Baba, A. ; Nishizawa, J.
Author_Institution :
Yazaki Tech. Center, Shizuoka, Japan
Abstract :
A monolithic light-triggered and quenched static induction (LTQ SI) thyristor, whose forward blocking voltage is 1200 V and whose current capacity exceeds 20 A, has been fabricated and investigated. This device is optically switched at 800 V and 16 A with a turn-on time of 2.8 μs and a turn-off time of 6.5 μs. Such switching speed is achieved by adopting an anode-emitter short structure as a double gate structure. An on-state voltage is maintained as low as 2.5 V at the anode current of 20 A by optimizing the anode-emitter short structure
Keywords :
photoconducting devices; thyristors; 1200 V; 2.8 mus; 20 A; 6.5 mus; anode current; anode-emitter short structure; current capacity; double gate structure; forward blocking voltage; monolithic light-triggered quenched static induction thyristor; on-state voltage; switching speed; Anodes; Cathodes; Circuits; Optical devices; Optical modulation; Optical sensors; P-i-n diodes; Resistors; Thyristors; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 1989. PESC '89 Record., 20th Annual IEEE
Conference_Location :
Milwaukee, WI
DOI :
10.1109/PESC.1989.48505
