Parasitic bipolar turn-on of PD-SOI MOSFETs in dynamic logic circuits

Due to its reduction in junction capacitance, increased current drive, and higher transconductance, SOI is very well suited to applications in high-speed digital logic circuits. Coupled with the common practice of utilizing dynamic logic in critical circuit pathways, one should expect SOI to have a very large impact on speeding up circuit blocks if it is applied to dynamic logic. Specifically, PD-SOI would be a better candidate as opposed to FD-SOI as it has better threshold control. However, this work will report for the first time erroneous operation of PD-SOI dynamic logic circuits resulting from the floating body induced turn-on of the parasitic bipolar transistor. In addition, potential solutions to overcome this unwanted bipolar leakage of stored charge will also be presented