Frequency dispersion in partially depleted SOI MOSFET output resistance

Author

Fung, Samuel K H ; Wong, Man Kit ; Chan, Mansun ; Nguyen, Cuong T. ; Ko, Ping K.

Author_Institution

Dept. of EEE, Hong Kong Univ. of Sci. & Technol., Clear Water Bay, Hong Kong

fYear

1996

fDate

30 Sep-3 Oct 1996

Firstpage

146

Lastpage

147

Abstract

Floating body effect (FBE) in partially depleted SOI MOSFET has become the focus of research recently. So far, most researcher concentrated their study on switching type circuit operation. However, in order to quantify the impact of floating body on analog circuit, small signal characteristic in frequency domain should be investigated. This paper reports an enhancement of output resistance (R_out) at high frequency in partially depleted devices. The effect is explained by the floating body potential fluctuation under the influence of hole accumulation in the neutral body and gate coupling. At high current level, self heating effect overrides FBE and decreases R_out at high frequency

Keywords

MOSFET; silicon-on-insulator; analog circuit; floating body effect; frequency dispersion; high frequency; output resistance; partially depleted SOI MOSFET; potential fluctuation; self heating; small signal characteristics; Capacitance; Diodes; Electron devices; Equivalent circuits; Fluctuations; Frequency; Heating; Immune system; MOSFET circuits; Partial discharges;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1996. Proceedings., 1996 IEEE International

Conference_Location

Sanibel Island, FL

ISSN

1078-621X

Print_ISBN

0-7803-3315-2

Type

conf

DOI

10.1109/SOI.1996.552536

Filename

552536