Title :
8000 V 1000 A gate turn-off thyristor with low on-state voltage and low switching loss
Author :
Kekura, Mitsuru ; Akiyama, Hirokazu ; Tani, Masayuki ; Yamada, Shin-ichi
Author_Institution :
Meidensha Corp., Numazu, Japan
Abstract :
An 8000 V, 1000 A gate turn-off thyristor (GTO) has been developed. Low on-state voltage and low switching loss are realized with a combination of a p-i-n structure and a novel ringed-anode short structure. The p-i-n structure is fabricated by using both a diffusion technique and an epitaxial growth technique. The device´s structure, the p-i-n base process, and the electrical characteristics of the GTO are discussed
Keywords :
thyristors; 1000 A; 8000 V; GTO; diffusion technique; electrical characteristics; epitaxial growth technique; gate turn-off thyristor; on-state voltage; p-i-n structure; ringed-anode short structure; switching loss; Anodes; Cathodes; Choppers; Epitaxial growth; Inverters; Low voltage; Semiconductor devices; Switching loss; Tail; Thyristors;
Conference_Titel :
Power Electronics Specialists Conference, 1989. PESC '89 Record., 20th Annual IEEE
Conference_Location :
Milwaukee, WI
DOI :
10.1109/PESC.1989.48506
