Title :
Novel technique for carrier lifetime measurement by Ψ-MOSFET transients
Author :
Cristoloveanu, S. ; Elewa, T. ; Munteanu, D. ; Ionescu, A.
Author_Institution :
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
fDate :
30 Sep-3 Oct 1996
Abstract :
A novel method for carrier lifetime characterisation that exclusively works in SOI wafers has been devised and carefully investigated. The main advantages of using the pseudo-MOS transistor (Ψ-MOSFET) transient technique are : (i) in situ operation at the wafer level, (ii) set-up simplicity, (iii) quick comparison of SOI variants for process optimization, and (iv) simple identification of the residual film doping
Keywords :
MOSFET; carrier lifetime; silicon-on-insulator; transient analysis; Ψ-MOSFET transients; SOI wafer; carrier lifetime measurement; pseudo-MOS transistor; Charge carrier lifetime; Conducting materials; Doping; Integrated circuit measurements; Pressure measurement; Probes; Pulse amplifiers; Substrates; Threshold voltage; Transient analysis;
Conference_Titel :
SOI Conference, 1996. Proceedings., 1996 IEEE International
Conference_Location :
Sanibel Island, FL
Print_ISBN :
0-7803-3315-2
DOI :
10.1109/SOI.1996.552543
