• DocumentCode
    3239216
  • Title

    Scaling laws and performance limitations of power turn-off devices

  • Author

    Jaecklin, André A. ; Adam, Bruno

  • Author_Institution
    Asea Brown Boveri Ltd., Lenzberg, Switzerland
  • fYear
    1989
  • fDate
    26-29 Jun 1989
  • Firstpage
    337
  • Abstract
    The performance of multiple-cell devices is limited by a redistribution of current during turn-off because minor differences between the otherwise identical cells seem to become important. A simple model based on Gaussian statistics gives a quantitative explanation of this phenomenon for the first time. For the example of a gate turn-off thyristor (GTO) it leads to an approximate square-root scaling of turn-off current with device size. Good agreement with experimental results is found. The model is not GTO-specific and may cover other devices as well
  • Keywords
    thyristors; GTO; Gaussian statistics; gate turn-off thyristor; performance limitations; scaling laws; Charge carrier lifetime; Circuits; Electric breakdown; Low voltage; Performance analysis; Physics; Silicon; Statistical distributions; Statistics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists Conference, 1989. PESC '89 Record., 20th Annual IEEE
  • Conference_Location
    Milwaukee, WI
  • Type

    conf

  • DOI
    10.1109/PESC.1989.48507
  • Filename
    48507