DocumentCode :
3239632
Title :
Ballasting HBTs For Wireless Power Amplifier Operation
Author :
Maas, Stephen
Author_Institution :
Univ. Coll., Dublin
fYear :
2006
fDate :
30-31 Jan. 2006
Firstpage :
2
Lastpage :
5
Abstract :
This paper describes ongoing work to evaluate conditions for bias stability in large power devices, with particular emphasis on the interplay between thermal stability and electrical performance. We show that base ballast generally provides good thermal stability in HBTs, but only if appropriate levels of ballast resistance are used. Those values are surprisingly high. Base ballast may also affect saturation characteristics and thus linearity of power amplifier devices
Keywords :
MMIC power amplifiers; heterojunction bipolar transistors; millimetre wave power amplifiers; thermal stability; HBT; base ballast; thermal stability; wireless power amplifier operation; Educational institutions; Electric resistance; Electronic ballasts; Heterojunction bipolar transistors; Linearity; Operational amplifiers; Power amplifiers; Temperature; Thermal resistance; Thermal stability; Ballast; HBT; Power Amplifiers; Thermal Effects;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Nonlinear Microwave and Millimeter-Wave Circuits, 2006 International Workshop on
Conference_Location :
Aveiro
Print_ISBN :
0-7803-9723-1
Electronic_ISBN :
0-7803-9723-1
Type :
conf
DOI :
10.1109/INMMIC.2006.283493
Filename :
4062244
Link To Document :
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