Nonlinear table-based static HBT model including thermal effects

Author

Nunez-Fernandez, B. ; Barciela, M. Fernandez ; Manin, G. Fernandez ; Mojon, O. ; Sanchez, E. ; Tasker, P.J.

Author_Institution

Depart. de Teoria de la Senal y Comunicaciones, Univ. de Vigo

fYear

2006

fDate

30-31 Jan. 2006

Firstpage

6

Lastpage

8

Abstract

A nonlinear table-based thermal model of the static HBT behavior is presented for the first time and validated under DC operation. The generated model uses table-based nonlinear functions I_c and V _be in the output and input ports, respectively, and both are defined vs. I_b and V_ce by using a non-uniform bias grid. Thermal modeling (self-biasing and environment temperature dependence) is done by means of two analytical functions (one for each device port) involving table-based nonlinear coefficients. Five tables are the minimum required to accurately predict the device dc behavior vs. temperature. Model extraction is direct and does not require optimization. Excellent results have been obtained for different InGaAs/GaAs HBTs in the range 10 to 100 degC

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; nonlinear functions; 10 to 100 C; InGaAs-GaAs; environment temperature dependence; heterojunction bipolar transistor; nonlinear functions; nonlinear table-based static HBT model; self-biasing; thermal effects; thermal modeling; Equations; FETs; Heterojunction bipolar transistors; III-V semiconductor materials; Integrated circuit modeling; MMICs; Predictive models; Temperature dependence; Temperature distribution; Thermal conductivity; Heterojunction Bipolar Transistor; modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Nonlinear Microwave and Millimeter-Wave Circuits, 2006 International Workshop on

Conference_Location

Aveiro

Print_ISBN

0-7803-9722-3

Electronic_ISBN

0-7803-9723-1

Type

conf

DOI

10.1109/INMMIC.2006.283494

Filename

4062245