Title :
A robust lateral power MOSFET buffered H-bridge motor driver power IC
Author :
Shekar, M.S. ; Williams, Richard K. ; Darwish, Mohamed ; Lee, Rocky
Author_Institution :
Siliconix Inc., Santa Clara, CA, USA
Abstract :
A TTL compatible monolithic buffered H-bridge motor driver power IC implemented using low voltage power CMOS and capable of operating from 3.8 to 13.2 V is demonstrated experimentally for the first time. The buffered H-bridge is designed using an isolated lateral LDD-MOSFET structure in 2 μm BCD technology. The transient failure mechanisms of the isolated lateral MOSFET in the H-bridge topology is contrasted to the non-isolated structure through experiments and device simulations. Experiments with inductive loads indicated that the operating voltage of the non-isolated MOSFET is limited to 9 V by the snap-back of the lateral parasitic NPN. It is shown in this paper, that the transient failure mode can be eliminated and the absolute maximum voltage increased to 15 V by using an isolated lateral MOSFET structure
Keywords :
CMOS integrated circuits; bridge circuits; driver circuits; failure analysis; integrated circuit reliability; motor drives; power MOSFET; power integrated circuits; transient analysis; 2 micron; 3.8 to 15 V; BCD technology; TTL compatible monolithic driver power IC; buffered H-bridge; inductive loads; isolated lateral LDD MOSFET structure; lateral parasitic NPN; low voltage power CMOS; motor driver power IC; robust lateral power MOSFET; transient failure mechanisms; transient failure mode elimination; CMOS technology; Driver circuits; Isolation technology; Low voltage; MOSFET circuits; Optical buffering; Power MOSFET; Power integrated circuits; Protection; Robustness;
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
Print_ISBN :
0-7803-3993-2
DOI :
10.1109/ISPSD.1997.601469