Performance of an Integrated 2.1 GHz Analog Predistorter

Author

Rahkonen, Timo ; Kursu, Olli ; Riikola, Marko ; Aikio, Janne ; Tuikkanen, Tapani

Author_Institution

Dept. of Electr. Eng. & Inf. Technol., Oulu Univ.

fYear

2006

fDate

30-31 Jan. 2006

Firstpage

34

Lastpage

37

Abstract

This paper presents the structure and measured results of a RF predistorter IC fabricated in a 0.35mum SiGe BiCMOS process. The IC implements a 5th-degree polynomial predistorter which has been used to linearize a 2.1 GHz LDMOS power amplifier. The measurement setup and results are described. Up to 20 dB cancellation is achieved in 2-tone measurements and up to 8 dB with WCDMA data. The circuit includes also output for the squared envelope signal that can be used as a baseband injection signal to cancel 2nd order distortion components that typically cause memory effects

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; UHF power amplifiers; code division multiple access; intermodulation distortion; linearisation techniques; polynomials; 0.35 micron; 2.1 GHz; BiCMOS process; LDMOS power amplifier; SiGe; WCDMA; envelope injection; intermodulation distortion; memory effects; polynomial predistorter; wideband code division multiple access; BiCMOS integrated circuits; Distortion measurement; Germanium silicon alloys; Integrated circuit measurements; Polynomials; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits; Silicon germanium; Envelope injection; Intermodulation distortion; Polynomial predistorter; wideband code division multiple access (WCDMA);

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Nonlinear Microwave and Millimeter-Wave Circuits, 2006 International Workshop on

Conference_Location

Aveiro

Print_ISBN

0-7803-9723-1

Electronic_ISBN

0-7803-9723-1

Type

conf

DOI

10.1109/INMMIC.2006.283502

Filename

4062253