Title :
Performance of an Integrated 2.1 GHz Analog Predistorter
Author :
Rahkonen, Timo ; Kursu, Olli ; Riikola, Marko ; Aikio, Janne ; Tuikkanen, Tapani
Author_Institution :
Dept. of Electr. Eng. & Inf. Technol., Oulu Univ.
Abstract :
This paper presents the structure and measured results of a RF predistorter IC fabricated in a 0.35mum SiGe BiCMOS process. The IC implements a 5th-degree polynomial predistorter which has been used to linearize a 2.1 GHz LDMOS power amplifier. The measurement setup and results are described. Up to 20 dB cancellation is achieved in 2-tone measurements and up to 8 dB with WCDMA data. The circuit includes also output for the squared envelope signal that can be used as a baseband injection signal to cancel 2nd order distortion components that typically cause memory effects
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; UHF power amplifiers; code division multiple access; intermodulation distortion; linearisation techniques; polynomials; 0.35 micron; 2.1 GHz; BiCMOS process; LDMOS power amplifier; SiGe; WCDMA; envelope injection; intermodulation distortion; memory effects; polynomial predistorter; wideband code division multiple access; BiCMOS integrated circuits; Distortion measurement; Germanium silicon alloys; Integrated circuit measurements; Polynomials; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits; Silicon germanium; Envelope injection; Intermodulation distortion; Polynomial predistorter; wideband code division multiple access (WCDMA);
Conference_Titel :
Integrated Nonlinear Microwave and Millimeter-Wave Circuits, 2006 International Workshop on
Conference_Location :
Aveiro
Print_ISBN :
0-7803-9723-1
Electronic_ISBN :
0-7803-9723-1
DOI :
10.1109/INMMIC.2006.283502
