Title :
Low frequency mobility effects on MESFET device
Author :
Rodriguez-Tellez, J. ; Ali, Nt ; Fernandez, T. ; Mediavilla, A. ; Tazon, A. ; Guillermo, A.
Abstract :
In a previous paper [2001] the observed differences between the static and dynamic IV characteristics of a MESFET were attributed to electric field and frequency effects. In this paper, such dependencies have been accounted for via the mobility figure. The results show a strong relationship between the mobility figure and both the frequency and the electric field (gate voltage).
Keywords :
Schottky gate field effect transistors; carrier mobility; characteristics measurement; semiconductor device measurement; MESFET device; dynamic IV characteristics; electric field; frequency; gate voltage; low frequency mobility effects; mobility figure; static IV characteristics; Capacitance; Educational institutions; Fingers; Frequency measurement; Gallium arsenide; Heating; MESFETs; Pulse measurements; Time measurement; Voltage;
Conference_Titel :
Communication Systems, 2002. ICCS 2002. The 8th International Conference on
Print_ISBN :
0-7803-7510-6
DOI :
10.1109/ICCS.2002.1183322
