DocumentCode
3239874
Title
Low frequency mobility effects on MESFET device
Author
Rodriguez-Tellez, J. ; Ali, Nt ; Fernandez, T. ; Mediavilla, A. ; Tazon, A. ; Guillermo, A.
Volume
2
fYear
2002
fDate
25-28 Nov. 2002
Firstpage
1194
Abstract
In a previous paper [2001] the observed differences between the static and dynamic IV characteristics of a MESFET were attributed to electric field and frequency effects. In this paper, such dependencies have been accounted for via the mobility figure. The results show a strong relationship between the mobility figure and both the frequency and the electric field (gate voltage).
Keywords
Schottky gate field effect transistors; carrier mobility; characteristics measurement; semiconductor device measurement; MESFET device; dynamic IV characteristics; electric field; frequency; gate voltage; low frequency mobility effects; mobility figure; static IV characteristics; Capacitance; Educational institutions; Fingers; Frequency measurement; Gallium arsenide; Heating; MESFETs; Pulse measurements; Time measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Communication Systems, 2002. ICCS 2002. The 8th International Conference on
Print_ISBN
0-7803-7510-6
Type
conf
DOI
10.1109/ICCS.2002.1183322
Filename
1183322
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