Title :
Measurements of Envelope Frequency Dependent Nonlinearity in GaN HEMT Power Device
Author :
Ahmed, A. ; Bunz, B. ; Srinidhi, E.R. ; Kompa, G.
Author_Institution :
Dept. of High Frequency Eng., Kassel Univ.
Abstract :
This paper proposes a measurement setup for analyzing and measuring the nonlinearity and memory effects in active power device as well as power amplifier (PA). In order to reduce the memory effect in the measurement data, new dynamic measurement setup with combination of two bias tees is developed for realizing short termination at envelope frequencies. Furthermore, for full automatic control of the measurement setup, controlling software using Agilent VEE programming software is developed. Moreover, measurement of envelope frequency dependent nonlinearity in GaN HEMT power device is presented
Keywords :
HEMT circuits; gallium compounds; power amplifiers; programming languages; wide band gap semiconductors; Agilent VEE programming software; GaN; HEMT power device; memory effects; power amplifiers; Amplitude modulation; Automatic control; Distortion measurement; Frequency dependence; Frequency measurement; Gallium nitride; HEMTs; Phase measurement; Phase modulation; Power measurement; GaN power device; measurement setup; memory effects;
Conference_Titel :
Integrated Nonlinear Microwave and Millimeter-Wave Circuits, 2006 International Workshop on
Conference_Location :
Aveiro
Print_ISBN :
0-7803-9723-1
Electronic_ISBN :
0-7803-9723-1
DOI :
10.1109/INMMIC.2006.283506
