Measurements of Envelope Frequency Dependent Nonlinearity in GaN HEMT Power Device

Author

Ahmed, A. ; Bunz, B. ; Srinidhi, E.R. ; Kompa, G.

Author_Institution

Dept. of High Frequency Eng., Kassel Univ.

fYear

2006

fDate

30-31 Jan. 2006

Firstpage

48

Lastpage

51

Abstract

This paper proposes a measurement setup for analyzing and measuring the nonlinearity and memory effects in active power device as well as power amplifier (PA). In order to reduce the memory effect in the measurement data, new dynamic measurement setup with combination of two bias tees is developed for realizing short termination at envelope frequencies. Furthermore, for full automatic control of the measurement setup, controlling software using Agilent VEE programming software is developed. Moreover, measurement of envelope frequency dependent nonlinearity in GaN HEMT power device is presented

Keywords

HEMT circuits; gallium compounds; power amplifiers; programming languages; wide band gap semiconductors; Agilent VEE programming software; GaN; HEMT power device; memory effects; power amplifiers; Amplitude modulation; Automatic control; Distortion measurement; Frequency dependence; Frequency measurement; Gallium nitride; HEMTs; Phase measurement; Phase modulation; Power measurement; GaN power device; measurement setup; memory effects;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Nonlinear Microwave and Millimeter-Wave Circuits, 2006 International Workshop on

Conference_Location

Aveiro

Print_ISBN

0-7803-9723-1

Electronic_ISBN

0-7803-9723-1

Type

conf

DOI

10.1109/INMMIC.2006.283506

Filename

4062257