Modeling of Multi-Finger SiGe HBTs and the Error Metrics of the Large Signal Model Performances

Author

Angelov, Iltcho ; Samelis, Apostolos ; Fernandez-Barciela, Monica ; Mojon, Tino

Author_Institution

Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg

fYear

2006

fDate

30-31 Jan. 2006

Firstpage

72

Lastpage

75

Abstract

A compact large-signal model for multi-finger SiGe HBTs is proposed and experimentally validated. The model formulation leads to a simple parameter extraction procedure. Model development was carried out for a multi-finger SiGe HBT fabricated in a commercial process technology. It consisted of 72 fingers each with a drawn emitter geometry of 2times20times0.5 mum². Results show good fit between measured and simulated DC, S-parameter and LS characteristics

Keywords

Ge-Si alloys; S-parameters; heterojunction bipolar transistors; semiconductor device models; HBT; S-parameters; SiGe; heterojunction bipolar transistors; large-signal model; parameter extraction; Data mining; Equivalent circuits; Fingers; Frequency dependence; Germanium silicon alloys; Heterojunction bipolar transistors; Radio frequency; Silicon germanium; Solid modeling; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Nonlinear Microwave and Millimeter-Wave Circuits, 2006 International Workshop on

Conference_Location

Aveiro

Print_ISBN

0-7803-9722-3

Electronic_ISBN

0-7803-9723-1

Type

conf

DOI

10.1109/INMMIC.2006.283512

Filename

4062263