• DocumentCode
    3240511
  • Title

    Logic drive consideration for Trench-gate IGBT

  • Author

    Takahashi, H. ; Takeda, M. ; Hagino, H. ; Yamada, T.

  • Author_Institution
    Power Device Div., Mitsubishi Electric Corp., Japan
  • fYear
    1997
  • fDate
    26-29 May 1997
  • Firstpage
    205
  • Lastpage
    208
  • Abstract
    This paper presents the initial consideration and the experimental results of logic gate drive used for Trench-gated IGBT (TIGBT). The logic drive IGBT was examined by using a 600 V/50 A (jc=200 A/cm2) TIGBT with thin gate oxide and low threshold voltage and the TIGBT was driven at logic voltage level of VGE=±5 V. A VCE(sat) of 1.53 V with a turn off loss of 2 mJ/pulse was achieved. Furthermore, the turn-off capability of the TIGBT achieved almost full square characteristic
  • Keywords
    insulated gate bipolar transistors; logic gates; 50 A; 600 V; gate oxide; logic gate drive; square characteristic; threshold voltage; trench-gate IGBT; turn off loss; Diodes; Electrodes; Insulated gate bipolar transistors; Logic design; Logic devices; Logic gates; Low voltage; MOSFET circuits; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
  • Conference_Location
    Weimar
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-3993-2
  • Type

    conf

  • DOI
    10.1109/ISPSD.1997.601473
  • Filename
    601473
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3240511