Title :
Logic drive consideration for Trench-gate IGBT
Author :
Takahashi, H. ; Takeda, M. ; Hagino, H. ; Yamada, T.
Author_Institution :
Power Device Div., Mitsubishi Electric Corp., Japan
Abstract :
This paper presents the initial consideration and the experimental results of logic gate drive used for Trench-gated IGBT (TIGBT). The logic drive IGBT was examined by using a 600 V/50 A (jc=200 A/cm2) TIGBT with thin gate oxide and low threshold voltage and the TIGBT was driven at logic voltage level of VGE=±5 V. A VCE(sat) of 1.53 V with a turn off loss of 2 mJ/pulse was achieved. Furthermore, the turn-off capability of the TIGBT achieved almost full square characteristic
Keywords :
insulated gate bipolar transistors; logic gates; 50 A; 600 V; gate oxide; logic gate drive; square characteristic; threshold voltage; trench-gate IGBT; turn off loss; Diodes; Electrodes; Insulated gate bipolar transistors; Logic design; Logic devices; Logic gates; Low voltage; MOSFET circuits; Threshold voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
Print_ISBN :
0-7803-3993-2
DOI :
10.1109/ISPSD.1997.601473
