DocumentCode
3240738
Title
Load Pull Characterization of GaN/AlGaN HEMTs
Author
Schuberth, Christian ; Arthaber, Holger ; Mayer, Markus L. ; Magerl, Gottfried ; Quay, Riudiger ; van Raay, Friedbert
Author_Institution
Inst. of Electr. Meas. & Circuit Design, Vienna Univ. of Technol.
fYear
2006
fDate
30-31 Jan. 2006
Firstpage
180
Lastpage
182
Abstract
This work presents a large signal characterization of a high power GaN/AlGaN HEMT transistor utilizing a harmonic load pull setup. Two different methods for passive automated tuners have been compared to synthesize the load impedances
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; power HEMT; power transistors; wide band gap semiconductors; GaN-AlGaN; harmonic load pull; high electron mobility transistor; high power HEMT transistor; large signal characterization; load pull characterization; passive automated tuners; Aluminum gallium nitride; Gallium nitride; HEMTs; Heat sinks; Impedance; MODFETs; Photonic band gap; Power measurement; Transistors; Tuners; GaN/AlGaN; harmonic load pull; high electron mobility transistor (HEMT); passive automated tuners;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Nonlinear Microwave and Millimeter-Wave Circuits, 2006 International Workshop on
Conference_Location
Aveiro
Print_ISBN
0-7803-9723-1
Electronic_ISBN
0-7803-9723-1
Type
conf
DOI
10.1109/INMMIC.2006.283541
Filename
4062292
Link To Document