A Two Stage High Frequency Class F Power Amplifier

Author

Colantonio, P. ; Giannini, F. ; Giofre, R. ; Limiti, E. ; Lanzieri, C. ; Lavanga, S.

Author_Institution

Dept. of Electron. Eng., Roma Tor Vergata Univ.

fYear

2006

fDate

30-31 Jan. 2006

Firstpage

187

Lastpage

190

Abstract

In this paper the design of a two-stage class F high power amplifier made up by ten active devices is presented. The design is based on a new approach for combining the devices and designing the matching networks. The amplifier has been designed for synthetic aperture radar applications by using SELEX 0.6mum GaAs PHEMT technology. The design approach will be discussed and simulation results will be presented. In particular, 38.5dBm output power with 40% power added efficiency has been obtained at 9.6GHz in an operating bandwidth wider than 10%

Keywords

III-V semiconductors; gallium arsenide; integrated circuit design; microwave integrated circuits; microwave power amplifiers; 0.6 micron; 9.6 GHz; GaAs; PHEMT technology; SELEX; X-band applications; class F power amplifier; high frequency power amplifier; matching networks; power added efficiency; synthetic aperture radar; two-stage power amplifier; Breakdown voltage; Frequency; Gallium arsenide; High power amplifiers; Impedance matching; PHEMTs; Phased arrays; Power generation; Pulse amplifiers; Synthetic aperture radar; Class F; Synthetic Aperture Radar; X-Band Applications; high efficiency;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Nonlinear Microwave and Millimeter-Wave Circuits, 2006 International Workshop on

Conference_Location

Aveiro

Print_ISBN

0-7803-9722-3

Electronic_ISBN

0-7803-9723-1

Type

conf

DOI

10.1109/INMMIC.2006.283543

Filename

4062294