Hamming product code with iterative process for NAND flash memory controller

This paper presents a (32640, 30720, 224) iterative Hamming product code for forward error correction (FEC) in multi-level cell (MLC) NAND flash memory systems. The proposed code consists of folded product codes with processing (2040, 1920, 14) Hamming product codes, reiteratively, which are designed to be able to correct multiple burst or random errors. Experimental results show that coding gain is 1.6 dB at 10-9 of bit error probability, redundancy 6.3%, the number of iterating decoding process 16, and its bandwidth 3.17 Gbps, when implemented with a high speed FPGA.