Title :
Carrier injection enhancement effect of high voltage MOS devices-device physics and design concept
Author :
Omura, I. ; Ogura, T. ; Sugiyama, K. ; Ohashi, H.
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
IEGTs are one of the promising candidates for replacing GTOs in high voltage applications in 4.5 kV range. The injection enhancement effect of IEGT structure with the deep trench MOS gate and/or the wide cell design successfully reduces the voltage drop in the N-base. In this paper, we discuss the device physics and design concept of the injection enhancement effect for not only the trench structure but also the planar structure
Keywords :
power MOSFET; 4.5 kV; IEGT; N-base; carrier injection enhancement effect; design; high voltage MOS device; injection enhancement gate transistor; planar structure; trench structure; Anodes; Cathodes; Electrons; Laboratories; MOS devices; P-i-n diodes; Physics; Tellurium; Thyristors; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
Print_ISBN :
0-7803-3993-2
DOI :
10.1109/ISPSD.1997.601476
