Title :
Active low noise transition from rectangular waveguide to microstrip line
Author :
Grabherr, W. ; Menzel, Wolfgang
Author_Institution :
Microwave Tech., Ulm Univ., Germany
Abstract :
An active transition from rectangular waveguide to microstrip line, operating in X-band with a GaAs MESFET as integral part of the transition is presented. The design allows for low noise amplification of the signal with improved bandwidth compared to the corresponding passive transition. Measured results of noise figure and power gain are given.<>
Keywords :
S-parameters; Schottky gate field effect transistors; amplification; microstrip antennas; microstrip lines; noise; rectangular waveguides; waveguide components; GaAs; MESFET; SHF; X-band; active low noise transition; bandwidth improvement; low noise amplification; microstrip line; rectangular waveguide; Active noise reduction; Bandwidth; Gallium arsenide; MESFETs; Microstrip components; Power measurement; Rectangular waveguides; Signal design; Waveguide components; Waveguide transitions;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406234
