DocumentCode
3241593
Title
Active low noise transition from rectangular waveguide to microstrip line
Author
Grabherr, W. ; Menzel, Wolfgang
Author_Institution
Microwave Tech., Ulm Univ., Germany
fYear
1995
fDate
16-20 May 1995
Firstpage
1403
Abstract
An active transition from rectangular waveguide to microstrip line, operating in X-band with a GaAs MESFET as integral part of the transition is presented. The design allows for low noise amplification of the signal with improved bandwidth compared to the corresponding passive transition. Measured results of noise figure and power gain are given.<>
Keywords
S-parameters; Schottky gate field effect transistors; amplification; microstrip antennas; microstrip lines; noise; rectangular waveguides; waveguide components; GaAs; MESFET; SHF; X-band; active low noise transition; bandwidth improvement; low noise amplification; microstrip line; rectangular waveguide; Active noise reduction; Bandwidth; Gallium arsenide; MESFETs; Microstrip components; Power measurement; Rectangular waveguides; Signal design; Waveguide components; Waveguide transitions;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location
Orlando, FL, USA
ISSN
0149-645X
Print_ISBN
0-7803-2581-8
Type
conf
DOI
10.1109/MWSYM.1995.406234
Filename
406234
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