Title :
Buried channel MOSFET DC SPICE modeling using surface channel models
Author :
Kulas, M. ; Nathan, A. ; Weale, G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Abstract :
In this paper, we review the various methods available for modeling DC behaviour of buried channel metal oxide semiconductor transistors in SPICE. A surface channel model is used to predict the buried channel device DC behaviour, and an equivalent circuit using the fitted surface channel model is presented
Keywords :
MOSFET; SPICE; equivalent circuits; semiconductor device models; DC behaviour; SPICE modeling; buried channel MOSFET; equivalent circuit; surface channel models; Doping; Equivalent circuits; FETs; Implants; MOSFET circuits; Predictive models; SPICE; Substrates; Threshold voltage; Virtual manufacturing;
Conference_Titel :
Electrical and Computer Engineering, 1998. IEEE Canadian Conference on
Conference_Location :
Waterloo, Ont.
Print_ISBN :
0-7803-4314-X
DOI :
10.1109/CCECE.1998.682780
