A new extraction method of device parameters for mass production E-T data analysis

Author

Kamohara, Shiro ; Ohuchi, T. ; Okuyama, K. ; Murakami, E. ; Kawashima, Yoshiya ; Nishida, A. ; Suzuki, C. ; Ohji ; Kubota, K.

Author_Institution

Semicond. Group, Hitachi Ltd., Tokyo

fYear

2001

fDate

2001

Firstpage

43

Lastpage

46

Abstract

A new extraction method of device parameters was developed for mass-production E-T data analysis. This method could be easily introduced to the electrical test measurement without degrading throughput, and extract the effective channel length (Leff) in the saturation region. This parameter has high sensitivity to the halo profile, which was a main parameter of the process variance to realize high performance MOSFETs beyond 0.1 um generation. Based on our method, we have established the E-T data analysis system in mass production

Keywords

MOSFET; digital simulation; doping profiles; production testing; semiconductor device manufacture; semiconductor device models; semiconductor device testing; data analysis; device parameters; effective channel length; electrical test measurement; extraction method; halo profile; high performance MOSFETs; mass production E-T data; process variance; saturation region; Data analysis; Data mining; Degradation; Electric variables measurement; Indium tin oxide; Intrusion detection; MOSFETs; Mass production; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Statistical Methodology, IEEE International Workshop on, 2001 6yh.

Conference_Location

Kyoto

Print_ISBN

0-7803-6688-3

Type

conf

DOI

10.1109/IWSTM.2001.933823

Filename

933823