Title :
Impact of reactor- and transistor-type on electron shading effects
Author :
Creusen, Martin ; Ackaert, Jan ; De Backer, Eddy ; Groeseneken, Guido
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
Electron shading (ES) effects, which lead to plasma process-induced damage in etching processes, were studied as a function of reactor- and transistor-type. It was found that the classical ES effect, which occurs under the latent antenna regime, dominates for the current high-density plasma reactors, independent of the used transistor-type. However, for less dense plasma reactors, the so-called extended ES effect, which occurs during the overetch regime, can overrule the classical ES effect depending on the transistor-type
Keywords :
integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; plasma density; plasma materials processing; sputter etching; classical ES effect; electron shading effects; etching processes; extended ES effect; high-density plasma reactors; latent antenna regime; overetch regime; plasma process-induced damage; plasma reactors; reactor-type effects; transistor-type effects; CMOS technology; Electrons; Etching; MOS devices; MOSFETs; Plasma applications; Plasma chemistry; Plasma density; Plasma devices; Space charge;
Conference_Titel :
Plasma Process-Induced Damage, 1999 4th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-9651577-3-3
DOI :
10.1109/PPID.1999.798796
