Impact of reactor- and transistor-type on electron shading effects

Author

Creusen, Martin ; Ackaert, Jan ; De Backer, Eddy ; Groeseneken, Guido

Author_Institution

IMEC, Leuven, Belgium

fYear

1999

fDate

1999

Firstpage

8

Lastpage

11

Abstract

Electron shading (ES) effects, which lead to plasma process-induced damage in etching processes, were studied as a function of reactor- and transistor-type. It was found that the classical ES effect, which occurs under the latent antenna regime, dominates for the current high-density plasma reactors, independent of the used transistor-type. However, for less dense plasma reactors, the so-called extended ES effect, which occurs during the overetch regime, can overrule the classical ES effect depending on the transistor-type

Keywords

integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; plasma density; plasma materials processing; sputter etching; classical ES effect; electron shading effects; etching processes; extended ES effect; high-density plasma reactors; latent antenna regime; overetch regime; plasma process-induced damage; plasma reactors; reactor-type effects; transistor-type effects; CMOS technology; Electrons; Etching; MOS devices; MOSFETs; Plasma applications; Plasma chemistry; Plasma density; Plasma devices; Space charge;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Process-Induced Damage, 1999 4th International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-9651577-3-3

Type

conf

DOI

10.1109/PPID.1999.798796

Filename

798796