Antenna ratio definition for VLSI circuits [plasma etch damage]

Author

Simon, Paul ; Luchies, Jan-Marc ; Maly, Wojciech

Author_Institution

Philips Semicond., Nijmegen, Netherlands

fYear

1999

fDate

1999

Firstpage

16

Lastpage

20

Abstract

Until the plasma induced damage phenomenon is well understood and can be eliminated completely by optimizing process parameters, the risk of yield and reliability excursions must still be reduced by charging-robust product design. However, design solutions can only be effective if they are based on a proper definition of the antenna ratio. A number of studies of the charging damage layout dependency show that the antenna ratio concept, as applied at present, is inadequate. In this paper, a new and improved antenna ratio model is proposed and then applied to a product in order to determine its usefulness for detection of plasma etching induced damage conditions in IC layouts

Keywords

VLSI; integrated circuit layout; integrated circuit reliability; integrated circuit yield; plasma materials processing; sputter etching; surface charging; IC layout; IC reliability excursions; IC yield excursions; VLSI circuits; antenna ratio; antenna ratio concept; antenna ratio definition; antenna ratio model; charging damage layout dependency; charging-robust product design; plasma etch damage; plasma etching induced damage conditions; plasma induced damage; plasma process damage; process parameter optimization; Diodes; Etching; Integrated circuit modeling; Libraries; Manufacturing processes; Plasma applications; Plasma devices; Plasma materials processing; Robustness; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Process-Induced Damage, 1999 4th International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-9651577-3-3

Type

conf

DOI

10.1109/PPID.1999.798798

Filename

798798