Title :
Compounding effects of UV exposure, ion bombardment, electron shading and plasma charging in a high density plasma poly etcher
Author :
Lin, Shyue-Shyh ; Tsui, Bing-Yue ; Tsai, Chia-Shone ; Hsia, Chin C.
Author_Institution :
Deep Submicron Technol. Div., Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
A complete set of test structures was developed to monitor the compounding effects of UV exposure, ion bombardment, electron shading and plasma charging in a HDP poly etcher. Electron shading-enhanced ion bombardment damage was observed in our experiments. We also found that UV exposure does enhance plasma charging damage
Keywords :
elemental semiconductors; integrated circuit technology; integrated circuit testing; ion-surface impact; plasma density; plasma materials processing; silicon; sputter etching; surface charging; ultraviolet radiation effects; HDP poly etcher; Si; UV exposure; UV exposure enhanced plasma charging damage; compounding effects; electron shading; electron shading-enhanced ion bombardment damage; high density plasma poly etcher; ion bombardment; plasma charging; plasma charging damage; test structures; Capacitors; Electrons; Etching; Leakage current; Monitoring; Plasma applications; Plasma density; Plasma devices; Plasma materials processing; Testing;
Conference_Titel :
Plasma Process-Induced Damage, 1999 4th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-9651577-3-3
DOI :
10.1109/PPID.1999.798804
