Title :
Emerging Yield and Reliability Challenges in Nanometer CMOS Technologies
Author :
Gielen, G. ; De Wit, P. ; Maricau, E. ; Loeckx, J. ; Martin-Martinez, J. ; Kaczer, B. ; Groeseneken, G. ; Rodríguez, R. ; Nafría, M.
Author_Institution :
Dept. Elektrotechniek ESAT-MICAS, Katholieke Univ. Leuven, Leuven
Abstract :
With further scaling of nanometer CMOS technologies, yield and reliability become an increasing challenge. This paper reviews the most important phenomena affecting yield and reliability. For each effect, the basic physical mechanisms causing the effect and its impact on transistor parameters are described. Possible solutions to cope/handle with these effects on the design level are discussed as well.
Keywords :
CMOS integrated circuits; integrated circuit reliability; integrated circuit yield; nanotechnology; integrated circuit reliability; integrated circuit yield; nanometer CMOS technologies; physical mechanisms; transistor parameters; CMOS technology; Degradation; Digital circuits; Fabrication; Integrated circuit reliability; Intrusion detection; MOS devices; Semiconductor device modeling; Stress; Threshold voltage;
Conference_Titel :
Design, Automation and Test in Europe, 2008. DATE '08
Conference_Location :
Munich
Print_ISBN :
978-3-9810801-3-1
Electronic_ISBN :
978-3-9810801-4-8
DOI :
10.1109/DATE.2008.4484862
