Title :
Plasma induced damage from HDP process on the ultra-thin gate oxide
Author :
Chen, Shoumian ; Sudijono, John ; Perera, Charith ; Jin, Yin ; Susilo, Fanny ; Zeng, Xu ; Kumar, A. Vijay ; Wen, Jiaqing
Author_Institution :
Inst. of Microelectron., Singapore
Abstract :
In general, as the gate oxide thickness scales down, plasma damage is reduced. In this paper, we show that, for a gate oxide thickness of 45 Å, the plasma damage due to charging could still be severe, and that the damage may be induced by high-density plasma deposition in the back-end process of device fabrication rather than the traditional dry-etching process
Keywords :
dielectric thin films; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; integrated circuit yield; plasma deposition; surface charging; 45 angstrom; HDP process; SiO2; back-end process; device fabrication; dry-etching process; gate oxide thickness; high-density plasma deposition; plasma charging damage; plasma damage; plasma induced damage; ultra-thin gate oxide; Fabrication; MOS devices; Plasma accelerators; Plasma applications; Plasma density; Plasma devices; Plasma materials processing; Plasma measurements; Plasma properties; Plasma temperature;
Conference_Titel :
Plasma Process-Induced Damage, 1999 4th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-9651577-3-3
DOI :
10.1109/PPID.1999.798807
