Title :
Examination of punch through IGBT (PT-IGBT) for high voltage and high current applications
Author :
Mochizuki, K. ; Ishii, K. ; Takeda, M. ; Hagino, H. ; Yamada, T.
Author_Institution :
Fukuryo Semicond. Eng. Corp., Japan
Abstract :
Develops a high voltage and high current device that has as low loss and as high a destruction capability as possible. We have examined adoption of Punch Through IGBT (PT-IGBT). By optimizing concentration of p+ collector and local lifetime control method, we have realized a 3.3 kV-PT-IGBT which has the cross point of about half of rating current density
Keywords :
current density; insulated gate bipolar transistors; losses; power transistors; 3.3 kV; destruction capability; high current applications; high voltage applications; local lifetime control method; loss; p+ collector; punch through IGBT; rating current density; Current density; Doping; Electron beams; Epitaxial growth; Insulated gate bipolar transistors; Manufacturing; Optimization methods; Propagation losses; Substrates; Voltage control;
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
Print_ISBN :
0-7803-3993-2
DOI :
10.1109/ISPSD.1997.601481
