Title :
Application of the deuterium sintering process to improve the device design rule in reducing plasma induced damages
Author :
Kim, Young-Kwang ; Lee, Seok-Ha ; Lee, Hyui-Seung ; Kim, Bong-Seok ; Lee, Yong-Hee ; Lee, Jinju ; Cheng, Kangguo ; Chen, Zhi ; Hess, Karl ; Lyding, Joseph W.
Author_Institution :
ASIC Div., Samsung Electron. Co. Ltd., Kyungki-Do, South Korea
Abstract :
The latent damage induced by plasma processes has been investigated by applying polarized constant current stress to the gate electrode of n- and p-MOSFETs. By optimizing the stressing conditions to effectively monitor the plasma damage, deuterium sintering is found to be very efficient at reducing plasma damage by suppressing the regeneration of interface states
Keywords :
MOSFET; deuterium; electric current; electrodes; interface states; plasma materials processing; process monitoring; semiconductor device testing; sintering; sputter etching; surface charging; D; deuterium sintering process; device design rule; gate electrode; interface state regeneration suppression; interface states; latent damage; n-MOSFETs; p-MOSFETs; plasma damage; plasma damage monitoring; plasma etch; plasma induced damage; plasma processes; polarized constant current stress; stressing conditions optimization; Annealing; Deuterium; Hydrogen; MOS devices; Plasma applications; Plasma devices; Plasma properties; Polarization; Stress; Threshold voltage;
Conference_Titel :
Plasma Process-Induced Damage, 1999 4th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-9651577-3-3
DOI :
10.1109/PPID.1999.798814
