Title :
Plasma damage impact on nMOS electrical characteristics during a CCS stress
Author :
Pantisano, L. ; Paccagnelle, A. ; Colombo, P. ; Valentini, M.G.
Author_Institution :
Dipt. di Elettronica e Inf., Padova Univ., Italy
Abstract :
Plasma damage is generally evaluated by using suitable electrical stresses and characterisation techniques. Stress can induce both latent damage depassivation and new stress-induced defects. This work focuses on the stress depassivation kinetics of plasma damage in two different LDD-nMOSFETs, considering both oxide trapped charge and interface states
Keywords :
MOSFET; electron traps; hole traps; interface states; plasma materials processing; semiconductor device reliability; semiconductor device testing; CCS stress; LDD-nMOSFETs; characterisation techniques; constant current stress; electrical stresses; interface states; latent damage depassivation; nMOS electrical characteristics; oxide trapped charge; plasma damage; stress depassivation kinetics; stress-induced defects; CMOS technology; Carbon capture and storage; Electric variables; Geometry; Kinetic theory; MOS devices; Plasma density; Plasma properties; Stress; Voltage;
Conference_Titel :
Plasma Process-Induced Damage, 1999 4th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-9651577-3-3
DOI :
10.1109/PPID.1999.798816
