Title :
Reduction and non-uniformity of high density plasma process induced electrical degradation in MOS devices
Author :
Tzeng, Pei-Jer ; Li, Jen-Chieh ; Yeh, Chun-Chen ; Chang-Liao, Kuei-Shu
Author_Institution :
Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
The reduction of plasma etching induced electrical degradation using oxynitride formed by rapid-thermal processing (RTP) as thin gate oxide is investigated. The electrical characteristics of devices with oxynitride are much better in comparison with the conventional furnace grown gate oxide. In addition, a close relationship between reliability and antenna ratio (i.e. damaging charge-up area) is also observed
Keywords :
MOS capacitors; MOS integrated circuits; MOSFET; dielectric thin films; integrated circuit testing; nitridation; oxidation; plasma materials processing; rapid thermal processing; silicon compounds; sputter etching; surface charging; MOS devices; SiON; antenna ratio; damaging charge-up area; electrical characteristics; furnace grown gate oxide; high density plasma process induced electrical degradation; oxynitride RTP thin gate layer; plasma etching induced electrical degradation; plasma process induced electrical degradation nonuniformity; plasma process induced electrical degradation reduction; rapid-thermal processing; reliability; thin gate oxide; Degradation; Electric variables; Etching; MOS devices; Nitrogen; Plasma applications; Plasma density; Plasma devices; Plasma properties; Stress;
Conference_Titel :
Plasma Process-Induced Damage, 1999 4th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-9651577-3-3
DOI :
10.1109/PPID.1999.798823
