Reduction and non-uniformity of high density plasma process induced electrical degradation in MOS devices

Author

Tzeng, Pei-Jer ; Li, Jen-Chieh ; Yeh, Chun-Chen ; Chang-Liao, Kuei-Shu

Author_Institution

Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan

fYear

1999

fDate

1999

Firstpage

100

Lastpage

103

Abstract

The reduction of plasma etching induced electrical degradation using oxynitride formed by rapid-thermal processing (RTP) as thin gate oxide is investigated. The electrical characteristics of devices with oxynitride are much better in comparison with the conventional furnace grown gate oxide. In addition, a close relationship between reliability and antenna ratio (i.e. damaging charge-up area) is also observed

Keywords

MOS capacitors; MOS integrated circuits; MOSFET; dielectric thin films; integrated circuit testing; nitridation; oxidation; plasma materials processing; rapid thermal processing; silicon compounds; sputter etching; surface charging; MOS devices; SiON; antenna ratio; damaging charge-up area; electrical characteristics; furnace grown gate oxide; high density plasma process induced electrical degradation; oxynitride RTP thin gate layer; plasma etching induced electrical degradation; plasma process induced electrical degradation nonuniformity; plasma process induced electrical degradation reduction; rapid-thermal processing; reliability; thin gate oxide; Degradation; Electric variables; Etching; MOS devices; Nitrogen; Plasma applications; Plasma density; Plasma devices; Plasma properties; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Process-Induced Damage, 1999 4th International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-9651577-3-3

Type

conf

DOI

10.1109/PPID.1999.798823

Filename

798823