Title :
Microscopic observation of failure mechanism of anisotropic conductive film for flip-chip joining
Author :
Chen, Xu ; Zhang, Jun ; Wang, Z.P.
Author_Institution :
Dept. of Chem. Eng. & Technol., Tianjin Univ., China
Abstract :
The objective of this work was to study the failure mechanism of anisotropic conductive film (ACF) in chip-on-glass (COG) by microscopic observation. A semiconductor thermal cycle system was designed and manufactured based on the mechanism that a semiconductor P-N joint was able to generate cool and hot with electric current variation. The device took less than 40 min to complete a thermal cycle from -40°C to 95°C. An on-site local microscopic observation system was set up with an electron microscope. The moisture absorption of foil-on-glass (FOG) specimens were measured under thermal cycling (-40°C to 95°C ), high temperature and high humidity (85°C, 85%RH), and the ambient air (20°C, 41%RH) conditions, respectively. The evolution of interfacial bubbles and delamination of COG specimens was observed. The experiment has shown that the moisture absorption of ACF in FOG varied with the temperature and humidity.
Keywords :
anisotropic media; chip scale packaging; conducting materials; delamination; electron microscopy; elemental semiconductors; failure analysis; filled polymers; flip-chip devices; gold; humidity; integrated circuit testing; metallic thin films; moisture; nickel; p-n junctions; polymer films; printed circuit testing; printed circuits; silicon; -40 to 95 degC; ITO; InSnO; Ni-Au-Si; anisotropic conductive film; chip-on-glass; electric current variation; failure mechanism; foil-on-glass; humidity; interfacial bubble evolution; microscopic observation; moisture absorption; semiconductor P-N joint; semiconductor thermal cycle system; thermal cycle; Absorption; Anisotropic conductive films; Current; Delamination; Electron microscopy; Failure analysis; Humidity measurement; Moisture measurement; Semiconductor device manufacture; Temperature;
Conference_Titel :
Thermal and Thermomechanical Phenomena in Electronic Systems, 2004. ITHERM '04. The Ninth Intersociety Conference on
Print_ISBN :
0-7803-8357-5
DOI :
10.1109/ITHERM.2004.1318318