A method for reducing notching and electron shading damage in a continuous wave ECR metal etcher

Author

Tabara, Suguru

Author_Institution

Semicond. Div., Yamaha Corp., Shizouka, Japan

fYear

1999

fDate

1999

Firstpage

108

Lastpage

111

Abstract

The effects of the etching gas chemistry, the RF bias frequency and the ECR position in pattern-dependent charging were studied using an ECR plasma etch tool. Lowering the RF bias frequency and/or employing a gas chemistry containing an element with small mass such as hydrogen reduced electron shading damage and notching. Notching was suppressed by increasing the distance between the ECR point and the wafer. Furthermore, it is effective to employ an etching gas that contains elements of small atomic weight for reduction of electron shading damage by using continuous wave (CW) high-density plasmas

Keywords

integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; integrated circuit yield; plasma materials processing; sputter etching; surface charging; CW high-density plasmas; ECR plasma etch tool; ECR point-wafer distance; ECR position; H₂; RF bias frequency; atomic weight; continuous wave ECR metal etcher; electron shading damage; etching gas; etching gas chemistry; hydrogen etch gas chemistry; notching; pattern-dependent charging; Capacitors; Conducting materials; Electrons; Etching; Frequency; Plasma applications; Plasma chemistry; Plasma density; Plasma waves; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Process-Induced Damage, 1999 4th International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-9651577-3-3

Type

conf

DOI

10.1109/PPID.1999.798825

Filename

798825