DocumentCode
3242553
Title
Evaluation of charging damage in a plasma doping system
Author
Goeckner, M.J. ; Felch, S.B. ; Fang, Z. ; Weeman, J.
Author_Institution
Varian Res. Center, Palo Alto, CA, USA
fYear
1999
fDate
1999
Firstpage
112
Lastpage
115
Abstract
Plasma doping (PLAD) is one method being considered for the implantation of sub-0.18 μm devices. The production of these devices will require novel doping techniques that will make control of wafer charging more difficult and more important. Here, we examine charging control on the PLAD test stand at Varian´s Research Center
Keywords
doping profiles; integrated circuit reliability; integrated circuit technology; integrated circuit testing; ion implantation; plasma materials processing; PLAD; PLAD test stand; charging damage; device implantation; device production; doping techniques; plasma doping; plasma doping system; wafer charging control; Doping; Plasma applications; Plasma devices; Plasma immersion ion implantation; Plasma materials processing; Plasma properties; Plasma sources; Production; Surface charging; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Process-Induced Damage, 1999 4th International Symposium on
Conference_Location
Monterey, CA
Print_ISBN
0-9651577-3-3
Type
conf
DOI
10.1109/PPID.1999.798826
Filename
798826
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