Title :
Evaluation of charging damage in a plasma doping system
Author :
Goeckner, M.J. ; Felch, S.B. ; Fang, Z. ; Weeman, J.
Author_Institution :
Varian Res. Center, Palo Alto, CA, USA
Abstract :
Plasma doping (PLAD) is one method being considered for the implantation of sub-0.18 μm devices. The production of these devices will require novel doping techniques that will make control of wafer charging more difficult and more important. Here, we examine charging control on the PLAD test stand at Varian´s Research Center
Keywords :
doping profiles; integrated circuit reliability; integrated circuit technology; integrated circuit testing; ion implantation; plasma materials processing; PLAD; PLAD test stand; charging damage; device implantation; device production; doping techniques; plasma doping; plasma doping system; wafer charging control; Doping; Plasma applications; Plasma devices; Plasma immersion ion implantation; Plasma materials processing; Plasma properties; Plasma sources; Production; Surface charging; Testing;
Conference_Titel :
Plasma Process-Induced Damage, 1999 4th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-9651577-3-3
DOI :
10.1109/PPID.1999.798826
