Characterization of ion implanter electron flood guns using charge pumping and threshold voltage measurements

Author

Sawyer, W.D. ; Mason, P.W. ; Santiesteban, R.S. ; Persson, E.J.

Author_Institution

Eaton Corp., Beverly, MA, USA

fYear

1999

fDate

1999

Firstpage

124

Lastpage

127

Abstract

In this paper, three successive generations of ion implant electron flood devices are compared with regard to their wafer charging characteristics. Gate oxide damage of CMOS antenna transistors is used as a relative indicator to quantify the degree of implant charging. Charge pumping and threshold voltage measurements are used as parametric damage indicators. Our results show that the largest charging occurs when the first generation device, a secondary electron flood (SEF), is used for beam neutralization. The latest generation of electron flood gun designed to inject relatively low energy electrons provides the best control of wafer charging

Keywords

CMOS integrated circuits; electron guns; integrated circuit measurement; integrated circuit reliability; ion implantation; plasma materials processing; surface charging; CMOS antenna transistors; beam neutralization; charge pumping; charge pumping measurements; electron flood gun; first generation device; gate oxide damage; implant charging; ion implant electron flood devices; ion implanter electron flood guns; low energy electron injection; parametric damage indicators; secondary electron flood; threshold voltage; threshold voltage measurements; wafer charging characteristics; wafer charging control; Antenna measurements; Character generation; Charge measurement; Charge pumps; Current measurement; Electron guns; Floods; Implants; Threshold voltage; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Process-Induced Damage, 1999 4th International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-9651577-3-3

Type

conf

DOI

10.1109/PPID.1999.798829

Filename

798829