Relationship between plasma damage, SILC and gate-oxide reliability

Author

Cheung, K.P. ; Lu, Q. ; Ciampa, N.A. ; Liu, C.T. ; Chang, C.-P. ; Colonell, J.I. ; Lai, W.-Y.-C. ; Liu, R. ; Miner, J.F. ; Vaidya, H. ; Pai, C.S. ; Clemens, J.T.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1999

fDate

1999

Firstpage

137

Lastpage

140

Abstract

The debate on whether plasma-charging damage will become less of a problem or not when the gate-oxide is 30 Å or thinner has been going on for some time. This is, of course, a very important question. We showed, in a previous publication (Cheung et al., 1998), that charging damage continues to be a serious problem for ultra-thin gate-oxides when a high-density plasma is used. In this paper, we show that even when low-density plasma is used, charging damage is also a serious problem for ultra-thin gate-oxides by looking at the relationship between plasma damage, stress-induced leakage current (SILC) and gate oxide reliability

Keywords

dielectric thin films; failure analysis; integrated circuit modelling; integrated circuit reliability; integrated circuit testing; leakage currents; plasma density; plasma materials processing; surface charging; SILC; SiO₂-Si; charging damage; gate-oxide reliability; gate-oxide thickness; high-density plasma; low-density plasma; plasma damage; plasma-charging damage; stress-induced leakage current; ultra-thin gate-oxides; Capacitance measurement; Capacitors; Current measurement; Degradation; Electric breakdown; Electron traps; Leakage current; Plasma density; Plasma measurements; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Process-Induced Damage, 1999 4th International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-9651577-3-3

Type

conf

DOI

10.1109/PPID.1999.798833

Filename

798833