• DocumentCode
    3242789
  • Title

    Plasma diagnosis and charging damage

  • Author

    Malyshev, M.V. ; Donnelly, Vincent M. ; Colonell, J.I. ; Samukawa, S.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    149
  • Lastpage
    154
  • Abstract
    The importance of major plasma parameters (electron temperature, and ion and electron densities) in plasma-induced damage is discussed. Details of measuring these parameters with Langmuir probes are addressed. Special attention is paid to the errors often involved in the use of Langmuir probes and their consequences. Compensation methods for both RF and “slow” floating potential shifts to minimize measurement errors are discussed. An alternative method to measure electron temperature (Te), trace rare gases-optical emission spectroscopy (TRG-OES), is discussed along with the measurement of the electron energy distribution function (EEDF). Since pulsed plasmas show promise for reducing charging and damage, their parameters measured by various methods are also included
  • Keywords
    Langmuir probes; atomic emission spectroscopy; integrated circuit technology; ion density; measurement errors; plasma density; plasma materials processing; plasma temperature; surface charging; Langmuir probe measurement errors; Langmuir probes; RF floating potential shifts; TRG-OES; compensation methods; electron density; electron energy distribution function; electron temperature; ion density; measurement error minimization; plasma charging damage; plasma diagnosis; plasma parameters; plasma-induced damage; pulsed plasmas; slow floating potential shifts; surface charging; trace rare gases-optical emission spectroscopy; Electron emission; Energy measurement; Plasma density; Plasma diagnostics; Plasma measurements; Plasma temperature; Probes; Pulse measurements; Radio frequency; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Process-Induced Damage, 1999 4th International Symposium on
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    0-9651577-3-3
  • Type

    conf

  • DOI
    10.1109/PPID.1999.798836
  • Filename
    798836