Title :
Suppression of topography dependent charging using a phase-controlled pulsed inductively coupled plasma
Author :
Shin, Kyoung-Sub ; Park, Wan-Jae ; Kim, Ji-Soo ; Kang, Chang-Jin ; Ahn, Tae-Hyuk ; Moon, Joo-Tae ; Lee, Moon-Yong
Author_Institution :
Semicond. R&D, Samsung Electron. Co. Ltd., Kyungki-Do, South Korea
Abstract :
The topography dependent charging (TDC) potential on the bottom of an oxide contact is measured with an in-situ charge-up monitoring wafer during plasma processing. The effects of the contact aspect ratio and the bias power on the TDC are investigated from the potentials measured on that wafer. By analyzing the potentials, we correlate the TDC to the difference of the charging potentials between a shading and a blank probe. We can suppress TDC considerably using a phase-controlled pulsed inductively coupled plasma, especially when the phase delay of the bias power relative to the source power is near 180° (out-of-phase condition)
Keywords :
integrated circuit reliability; integrated circuit testing; integrated circuit yield; plasma materials processing; plasma probes; process monitoring; sputter etching; surface charging; surface topography; SiO2-Si; TDC potential; bias power; bias power phase delay; blank probe; charging potentials; contact aspect ratio; gate oxide contact; in-situ charge-up monitoring wafer; out-of-phase condition; phase-controlled pulsed inductively coupled plasma; plasma processing; shading probe; topography dependent charging potential; topography dependent charging suppression; wafer potentials; Monitoring; Phase modulation; Plasma applications; Plasma devices; Plasma measurements; Plasma sources; Plasma temperature; Probes; Programmable logic arrays; Surfaces;
Conference_Titel :
Plasma Process-Induced Damage, 1999 4th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-9651577-3-3
DOI :
10.1109/PPID.1999.798837