Title :
Hybrid 3000 A-MOSFET for GTO cascode switches
Author :
Oetjen, J. ; Sittig, R.
Author_Institution :
Inst. fur Elektrophys., Tech. Univ. Braunschweig, Germany
Abstract :
A hybrid high current MOSFET module for switching of GTO cascode switches is presented. The module consists of two separately controllable devices to be connected to gate and cathode of a GTO. Each is realized by connecting a large number of chips in parallel. The chosen arrangement reveals an extremely low internal stray inductance. Thus it is possible to switch currents from the cathode of the GTO to its gate with a di/dt of up to 30 kA/μs. Turning off a GTO in the cascode configuration shows an increased reverse biased safe operating area (RBSOA), so turn-off snubber can be omitted
Keywords :
MOS-controlled thyristors; inductance; losses; power semiconductor switches; 3000 A; GTO cascode switches; cascode configuration; current switching; high current MOSFET module; internal stray inductance; reverse biased safe operating area; Cathodes; Inductance; Joining processes; MOSFET circuits; Snubbers; Switches; Switching loss; Thyristors; Turning; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
Print_ISBN :
0-7803-3993-2
DOI :
10.1109/ISPSD.1997.601483
