Damascene copper integration

Author

Stamper, A.K. ; Heidenreich, J.E. ; Hubanks, D.C. ; Luce, S.L. ; McDevitt, T.L.

Author_Institution

IBM Microelectron., Essex Junction, VT, USA

fYear

1999

fDate

1999

Firstpage

171

Lastpage

176

Abstract

The increase in ratio of wiring RC delay to the intrinsic transistor RC delay is motivating the IC industry to move from subtractive-aluminum to damascene-copper wiring. In addition to having 40% lower sheet resistance, damascene copper has significantly lower resistance and capacitance variability than subtractive-aluminum wiring due to improved reactive ion etch bias control. Damascene copper causes less plasma charging than subtractive-aluminum wiring in wire/via antenna devices and the charging can be modulated by electron shadowing during via RIE

Keywords

capacitance; copper; delays; electric resistance; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; plasma materials processing; sputter etching; surface charging; Cu; IC industry; capacitance variability; charging modulation; damascene copper; damascene copper process integration; damascene-copper wiring; electron shadowing; intrinsic transistor RC delay; plasma charging; reactive ion etch bias control; resistance variability; sheet resistance; subtractive-aluminum wiring; via RIE; wire/via antenna devices; wiring RC delay; Capacitance; Copper; Delay; Electrons; Etching; Plasma applications; Plasma devices; Shadow mapping; Wire; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Process-Induced Damage, 1999 4th International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-9651577-3-3

Type

conf

DOI

10.1109/PPID.1999.798841

Filename

798841