DocumentCode :
3242896
Title :
Lattice-Boltzmann modeling of sub-continuum energy transport in Silicon-on-Insulator microelectronics including phonon dispersion effects
Author :
Escobar, R.A. ; Amon, Cristina H.
Author_Institution :
Dept. of Mech. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
Volume :
2
fYear :
2004
fDate :
1-4 June 2004
Firstpage :
584
Abstract :
Numerical simulations of time-dependent energy transport in semiconductor thin films are conducted by using the Lattice-Boltzmann method applied to phonon transport. The discrete Lattice-Boltzmann method is first derived from the continuous Boltzmann transport equation, where nonlinear phonon dispersion relations are used to find frequency-dependent phonon velocities for longitudinal acoustic phonons. A Silicon-on-Insulator (SOI) transistor is modeled as a thin film of silicon, with a hotspot simulated by imposing a heat generation term in a localized region of the computational domain. Results indicate that a transition from diffusive to ballistic energy transport is found as the characteristic length of the thin film becomes comparable to the phonon mean free path. This transition is present in heat conduction in thin films as well as in the transient thermal response of SOI transistors. Steady-state temperature distributions are then used to calculate size-dependent thermal conductivity values in silicon thin films.
Keywords :
Boltzmann equation; ballistic transport; heat conduction; integrated circuit modelling; phonon dispersion relations; semiconductor device models; semiconductor thin films; silicon-on-insulator; temperature distribution; thermal conductivity; thin film transistors; SOI transistor; Si; diffusive-ballistic energy transport transition; discrete Lattice Boltzmann modeling; frequency dependent phonon velocities; heat generation; longitudinal acoustic phonons; nonlinear phonon dispersion relations; phonon transport; semiconductor thin films; silicon-on-insulator microelectronics; size dependent thermal conductivity; steady state temperature distributions; subcontinuum energy transport; transient thermal response; Boltzmann equation; Dispersion; Frequency; Microelectronics; Numerical simulation; Phonons; Semiconductor thin films; Silicon on insulator technology; Thermal conductivity; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermal and Thermomechanical Phenomena in Electronic Systems, 2004. ITHERM '04. The Ninth Intersociety Conference on
Print_ISBN :
0-7803-8357-5
Type :
conf
DOI :
10.1109/ITHERM.2004.1318337
Filename :
1318337
Link To Document :
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