Process-induced damage in a dual-oxide (3.5/6.8 nm) 0.18-μm copper CMOS technology

Author

Hook, Terence B.

Author_Institution

Microelectron. Div., IBM Corp., Essex Junction, VT, USA

fYear

1999

fDate

1999

Firstpage

181

Lastpage

183

Abstract

Charging behaviour for three antenna types (polysilicon, contact array, and via array) is investigated for two oxide thicknesses in a copper back-end-of-line (BEOL) technology. We find that both the thick (6.8 nm) and the thin oxide (3.5 nm) devices are similarly susceptible to charging damage for various processes, except that damage manifests itself as gate leakage on the thin oxide devices, while the thick oxide device shows degradation to hot electron immunity as well as gate leakage

Keywords

CMOS integrated circuits; copper; dielectric thin films; hot carriers; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; leakage currents; plasma materials processing; sputter etching; surface charging; 0.18 micron; 3.5 nm; 6.8 nm; Cu-SiO₂-Si; antenna types; charging behaviour; charging damage; contact array antenna; copper BEOL technology; copper back-end-of-line technology; dual-oxide copper CMOS technology; gate leakage; hot electron immunity degradation; oxide thickness; polysilicon antenna; process-induced damage; thick oxide devices; thin oxide devices; via array antenna; Antenna arrays; Antenna measurements; CMOS process; CMOS technology; Copper; Diodes; Etching; FETs; Gate leakage; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Process-Induced Damage, 1999 4th International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-9651577-3-3

Type

conf

DOI

10.1109/PPID.1999.798843

Filename

798843