Effect of low temperature deuterium annealing on plasma process induced damage

Author

Lee, S.H. ; Kim, Y.K. ; Lee, Y.H. ; Kang, H.S. ; Ahn, C.G. ; Kang, B.K. ; Jinju Lee ; Cheng, Kangguo ; Chen, Zhi ; Hess, Karl ; Lyding, Joseph W.

Author_Institution

ASIC Div., Samsung Electron. Co. Ltd., Kyungki-Do, South Korea

fYear

1999

fDate

1999

Firstpage

188

Lastpage

191

Abstract

The effects of low temperature deuterium annealing on plasma process induced damage were examined for devices with a thin gate oxide. The devices were exposed to the plasma during poly-Si gate or metal processes, and the device characteristics were monitored by charge pumping and current-voltage measurements. It was observed that the metal process induced more plasma damage than the poly-Si gate process. The deuterium (D₂) annealing had little effect on oxide damage, but it was very effective in reducing the interface damage. After D₂ annealing, the devices showed a very low level of interface states, and the strength to withstand electrical stress was also enhanced. To maximize D₂ annealing effects, it is suggested that the D₂ annealing should be conducted without any H₂ annealing

Keywords

annealing; deuterium; dielectric thin films; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; integrated circuit yield; interface states; interface structure; plasma materials processing; sputter etching; D₂; D₂ annealing; D₂ annealing effects; SiO₂-Si; charge pumping; current-voltage measurements; deuterium annealing; device characteristics; electrical strength; electrical stress; interface damage; interface states; low temperature deuterium annealing; metal process induced plasma damage; metal processes; oxide damage; plasma exposure; plasma process induced damage; poly-Si gate process-induced plasma damage; poly-Si gate processes; thin gate oxide devices; Annealing; Charge measurement; Charge pumps; Current measurement; Deuterium; Monitoring; Plasma devices; Plasma measurements; Plasma properties; Plasma temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Process-Induced Damage, 1999 4th International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-9651577-3-3

Type

conf

DOI

10.1109/PPID.1999.798845

Filename

798845