DocumentCode :
3242986
Title :
Device effects and charging damage: correlations between SPIDER-MEM and CHARMR-2
Author :
Lukaszek, Wes ; Rendon, Michael J. ; Dyer, David E.
Author_Institution :
Wafer Charging Monitors Inc., Woodside, CA, USA
fYear :
1999
fDate :
1999
Firstpage :
200
Lastpage :
203
Abstract :
The reasons underlying correlations and lack of correlations between SPIDER-MEM and CHARM-2 wafer results are investigated for wafers implanted in a high-current, low energy ion implanter equipped with a plasma charge-control system. The results can be explained by taking into account the device structure and physics of the SPIDER-MEM devices, and the charging characteristics of the implanter. The work has important implications for comparisons of results obtained from charging monitors and damage monitors
Keywords :
integrated circuit reliability; integrated circuit testing; ion implantation; plasma materials processing; surface charging; CHARM-2 wafers; SPIDER-MEM devices; SPIDER-MEM wafers; charging damage; charging monitors; damage monitors; device effects; device physics; device structure; high-current/low energy ion implanter; implanted wafers; implanter charging characteristics; plasma charge-control system; Control systems; Current density; Physics; Plasma devices; Plasma materials processing; Plasma measurements; Plasma properties; Plasma sources; Surface charging; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Process-Induced Damage, 1999 4th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-9651577-3-3
Type :
conf
DOI :
10.1109/PPID.1999.798848
Filename :
798848
Link To Document :
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