DocumentCode
3243048
Title
Luminescence tuning in GaN layers
Author
Sanchez-R., V.M. ; Escobosa, A. ; Navarro, G. ; Avendano, M.A.
Author_Institution
Seccion de Electronica del Estado Solido, Departamento de Ingenieria Electrica, CINVESTAV, Av. IPN 2508, 07340 Mexico, D.F.
fYear
2004
fDate
8-10 Sept. 2004
Firstpage
253
Lastpage
256
Abstract
GaN layers were grown at low pressure by nitridation of GaAs substrates. The films showed photoluminescence when excited with ultraviolet light. The luminescence color could be tuned by adjusting the growth parameters.
Keywords
Fluorescence; Gallium arsenide; Gallium nitride; III-V semiconductor materials; Luminescence; Photoluminescence; Photonic band gap; Radiative recombination; Spontaneous emission; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical and Electronics Engineering, 2004. (ICEEE). 1st International Conference on
Conference_Location
Acapulco, Mexico
Print_ISBN
0-7803-8531-4
Type
conf
DOI
10.1109/ICEEE.2004.1433887
Filename
1433887
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