DocumentCode :
3243124
Title :
Behavior of excess electrons in supercritical fluids-electron attachment
Author :
Nishikawa, Masaru ; Holroyd, Richard A. ; Itoh, Kengo
Author_Institution :
Fac. of Eng., Kanagawa Inst. of Technol., Japan
fYear :
1999
fDate :
1999
Firstpage :
9
Lastpage :
12
Abstract :
The behavior of excess electrons in supercritical ethane was investigated by measuring mobility and reaction rates. Mobilities were measured by means of a time-of-flight method at 306-320 K as a function of pressure. Mobility values decreased at all temperatures with increasing pressure, but showed a small minimum or a shoulder at the pressure where the compressibility χϒ, has a peak. Electron attachment to CO2, NO, pyrimidine and C2F 4 over the same temperature range was studied as a function of pressure. Both attachment rate constants ka for NO and C 2F4, and equilibrium constants K(=ka/k d) for CO2 and pyrimidine increased sharply at pressures of χϒ peaks. Activation volumes Va * and reaction volumes ΔVr are very large and negative in the critical region. The volume change is mainly due to electrostriction around ions formed. The results are compared to volume changes predicted by a compressible continuum model
Keywords :
carbon compounds; dielectric liquids; electron attachment; electron mobility; electrostriction; nitrogen compounds; organic compounds; 306 to 320 K; C2F4; CO2; NO; attachment rate constants; compressibility; compressible continuum model; electron attachment; electrostriction; equilibrium constants; excess electrons; mobility; pyrimidine; reaction rates; supercritical ethane; supercritical fluids; Chemical technology; Chemistry; Electron mobility; Laboratories; Polarization; Predictive models; Pressure measurement; Pulse generation; Temperature distribution; Virtual colonoscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Dielectric Liquids, 1999. (ICDL '99) Proceedings of the 1999 IEEE 13th International Conference on
Conference_Location :
Nara
Print_ISBN :
0-7803-4759-5
Type :
conf
DOI :
10.1109/ICDL.1999.798855
Filename :
798855
Link To Document :
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