Low-frequency noise in millimeter-wave Si/SiGe heterojunction bipolar transistors

Author

Plana, R. ; Van Haaren, B. ; Roux, J.P. ; Escotte, Laurent ; Gruhle, A. ; Dietrich, H. ; Graffeuil, J.

Author_Institution

Lab. d´Autom. et d´Anal. des Syst., CNRS, Toulouse, France

fYear

1995

fDate

16-20 May 1995

Firstpage

1431

Abstract

In this paper we report on the low-frequency (LF) noise properties of Si/SiGe HBT´s. Our results indicate that these devices exhibit very interesting LF noise performance which compares well with those obtained for Si BJT´s. However, further improvements of the input referred noise current are still needed and our investigations show that they could be achieved through a reduction of the recombination processes at the emitter-base heterojunction and at the emitter periphery.<>

Keywords

Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device noise; semiconductor materials; silicon; EHF; LF noise properties; MM-wave devices; Si-SiGe; emitter periphery; emitter-base heterojunction; heterojunction bipolar transistors; input referred noise current; low-frequency noise; millimeter-wave HBT; recombination processes; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Microwave devices; Millimeter wave radar; Millimeter wave transistors; Noise generators; Noise reduction; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.406241

Filename

406241