DocumentCode
3243364
Title
Radiation-stable photovoltaic converters based on In2Te3-type semiconductors
Author
Gurevich, Y. ; Volovichev, I. ; Logvinov, H. ; Cruz-Irisson, M. ; Espejo-Lopez, G.
Author_Institution
Departamento de Fisica, CINVESTAV-IPN, Apdo. Postal 14-740, 07000 Mexico, D.F., Mexico
fYear
2004
fDate
8-10 Sept. 2004
Firstpage
303
Lastpage
304
Abstract
The perspective of use of radiation-stable semiconductor compounds with loose crystal structures for development of photovoltaic converters is discussed. Use of these semiconductors promises to get low cost solar cells with extremely high radiation stability. A theoretical possibility of creation of photoconverters based on semiconductors of this type is presented. Thin-film heterostructures of intrinsic semiconductors with thickness of the screening length order are shown to have properties, similar to conventional p-n heterojunctions, including photoconverters.
Keywords
Charge carrier processes; Conductive films; Conductivity; Heterojunctions; Photovoltaic systems; Semiconductor films; Semiconductor materials; Solar power generation; Solid state circuits; Stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical and Electronics Engineering, 2004. (ICEEE). 1st International Conference on
Conference_Location
Acapulco, Mexico
Print_ISBN
0-7803-8531-4
Type
conf
DOI
10.1109/ICEEE.2004.1433898
Filename
1433898
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