Increasing the switching speed of high-voltage IGBTs

Author

Robb, Francine ; Wan, Irene ; Yu, Sophie

Author_Institution

Power Products Div., Motorola Inc., Phoenix, AZ, USA

fYear

1997

fDate

26-29 May 1997

Firstpage

251

Lastpage

254

Abstract

The lower on-voltages of IGBTs, as compared to power MOSFETs, make them very attractive for high-voltage applications. Their higher switching losses, however, have limited the IGBT to low (<10 kHz) frequency applications. This paper will discuss the on-voltage/off-energy (Eoff) trade-offs of 1200 V non-punchthrough (NPT) IGBTs. Adjusting the trade-offs by modifying the backside process, by incorporating an annealed aluminum drain contact, and by proton implanting are discussed. A 1200 V NPT-IGBT with a fall time equivalent to a 1200 V power MOSFET, but with one-third its on-voltage, was produced using a 3E12/cm², 1.6 MeV backside proton implant

Keywords

annealing; insulated gate bipolar transistors; ion implantation; losses; power semiconductor switches; 1.6 MeV; 1200 V; annealed drain contact; backside process; fall time; high-voltage IGBTs; high-voltage applications; non-punchthrough devices; on-voltages; proton implanting; switching losses; switching speed; Aluminum; Annealing; Boron; Doping; Implants; Insulated gate bipolar transistors; MOSFETs; Medical simulation; Protons; Response surface methodology;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on

Conference_Location

Weimar

ISSN

1063-6854

Print_ISBN

0-7803-3993-2

Type

conf

DOI

10.1109/ISPSD.1997.601486

Filename

601486